Work

Sub 50 nm InP HEMT Device with Fmax Greater than 1 THz

Year: 2007

Type: conference-paper

Source: Technical digest - International Electron Devices Meeting/Technical digest

DOI: 10.1109/iedm.2007.4419013

Authors: R. Lai, X. B. Mei, W. R. Deal, W. Yoshida, Y. M. Kim, P. H. Liu, J. Lee, J. Uyeda, V. Radisic, M. Lange, T. Gaier, L. Samoska, A. Fung

Institutions: Northrop Grumman (United States), Jet Propulsion Laboratory

Language: English

Topic: Radio Frequency Integrated Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: Defense Advanced Research Projects Agency

OpenAlex ID: W1990104550

FWCI: 25.11

Cites: 5

Cited by: 275

Related to: 10