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X. B. Mei
Observed names:
Mei, Xiaobing,
X B Mei,
X. MEI,
X. Mei,
X.B. Mei,
X.b. Mei,
Xiaobing (Gerry) Mei,
Xiaobing B. Mei,
Xiaobing Mei
show all 9
Institution:
Northrop Grumman (United States)
Observed institutions:
Aoyama Gakuin University,
Hewlett-Packard (United States),
Jet Propulsion Laboratory,
Chinese Academy of Sciences,
Northrop Grumman (United States),
University of California San Diego,
Institute of Semiconductors,
Institute of Physics
show all 8
OpenAlex ID:
A5110193881
First Demonstration of Amplification at 1 THz Using 25-nm InP High Electron Mobility Transistor Process
2015
·
Xiaobing Mei
, Wayne Yoshida
, et al.
·
IEEE Electron Device Letters
·
429
Sub 50 nm InP HEMT Device with Fmax Greater than 1 THz
2007
·
R. Lai
, X. B. Mei
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
275
THz Monolithic Integrated Circuits Using InP High Electron Mobility Transistors
2011
·
William Deal
, X. B. Mei
, et al.
·
IEEE Transactions on Terahertz Science and Technology
·
229
Power Amplification at 0.65 THz Using InP HEMTs
2011
·
Vesna Radisic
, Kevin M. K. H. Leong
, et al.
·
IEEE Transactions on Microwave Theory and Techniques
·
127
Demonstration of a 0.48 THz Amplifier Module Using InP HEMT Transistors
2010
·
W. R. Deal
, X. B. Mei
, et al.
·
IEEE Microwave and Wireless Components Letters
·
110
Low Noise Amplification at 0.67 THz Using 30 nm InP HEMTs
2011
·
William. R. Deal
, K. Leong
, et al.
·
IEEE Microwave and Wireless Components Letters
·
109
A Submillimeter-Wave HEMT Amplifier Module With Integrated Waveguide Transitions Operating Above 300 GHz
2008
·
L. Samoska
, W.R. Deal
, et al.
·
IEEE Transactions on Microwave Theory and Techniques
·
101
A 0.85 THz Low Noise Amplifier Using InP HEMT Transistors
2015
·
Kevin M. K. H. Leong
, Xiaobing Mei
, et al.
·
IEEE Microwave and Wireless Components Letters
·
83
850 GHz Receiver and Transmitter Front-Ends Using InP HEMT
2017
·
Kevin M. K. H. Leong
, Xiaobing Mei
, et al.
·
IEEE Transactions on Terahertz Science and Technology
·
78
A 10-mW Submillimeter-Wave Solid-State Power-Amplifier Module
2010
·
V Radisic
, W R Deal
, et al.
·
IEEE Transactions on Microwave Theory and Techniques
·
73
Low noise amplifier for 180 GHz frequency band
2008
·
Pekka Kangaslahti
, David Pukala
, et al.
·
IEEE MTT-S International Microwave Symposium digest
·
65
Demonstration of Sub-Millimeter Wave Fundamental Oscillators Using 35-nm InP HEMT Technology
2007
·
V. Radisic
, X. B. Mei
, et al.
·
IEEE Microwave and Wireless Components Letters
·
63
220-GHz Solid-State Power Amplifier Modules
2012
·
Vesna Radisic
, Kevin M. K. H. Leong
, et al.
·
IEEE Journal of Solid-State Circuits
·
61
Recent progress in scaling InP HEMT TMIC technology to 850 GHz
2014
·
W.R. Deal
, K. Leong
, et al.
·
IEEE MTT-S International Microwave Symposium digest
·
60
Demonstration of a S-MMIC LNA with 16-dB Gain at 340-GHz
2007
·
W. R. Deal
, X. B. Mei
, et al.
·
Technical digest -- IEEE Compound Semiconductor Integrated Circuit Symposium
·
57
A W-band low-noise amplifier with 22K noise temperature
2009
·
Eric W. Bryerton
, Xiaobing Mei
, et al.
·
IEEE MTT-S International Microwave Symposium digest
·
46
Broadband MMIC LNAs for ALMA Band 2+3 With Noise Temperature Below 28 K
2017
·
David Cuadrado-Calle
, Danielle George
, et al.
·
IEEE Transactions on Microwave Theory and Techniques
·
42
A 75 mW 210 GHz Power Amplifier Module
2011
·
Vesna Radisic
, Kevin M. K. H. Leong
, et al.
·
Technical digest -- IEEE Compound Semiconductor Integrated Circuit Symposium
·
41
Fabrication of InP HEMT devices with extremely high Fmax
2008
·
R. Lai
, W.R. Deal
, et al.
·
Conference proceedings. ... International Conference on Indium Phosphide and Related Materials
·
40
35-nm InP HEMT SMMIC Amplifier With 4.4-dB Gain at 308 GHz
2007
·
X. B. Mei
, W. Yoshida
, et al.
·
IEEE Electron Device Letters
·
40
Scaling of InP HEMT Cascode Integrated Circuits to THz Frequencies
2010
·
W. R. Deal
, K. Leong
, et al.
·
Technical digest -- IEEE Compound Semiconductor Integrated Circuit Symposium
·
39
Submillimeter-Wave InP MMIC Amplifiers From 300–345 GHz
2008
·
D. Pukala
, L. Samoska
, et al.
·
IEEE Microwave and Wireless Components Letters
·
39
A 670 GHz Low Noise Amplifier with <10 dB Packaged Noise Figure
2016
·
W.R. Deal
, A. Zamora
, et al.
·
IEEE Microwave and Wireless Components Letters
·
34
A 330-GHz MMIC oscillator module
2008
·
Vesna Radisic
, Lorene Samoska
, et al.
·
IEEE MTT-S International Microwave Symposium digest
·
34
A 50 mW 220 GHz power amplifier module
2010
·
Vesna Radisic
, Kevin M.K.H. Leong
, et al.
·
IEEE MTT-S International Microwave Symposium digest
·
32
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Works count:
121
Citation count:
3,030
H-index:
30
I10-index:
54
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