Work

First Demonstration of Amplification at 1 THz Using 25-nm InP High Electron Mobility Transistor Process

Year: 2015

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2015.2407193

Authors: Xiaobing Mei, Wayne Yoshida, Mike Lange, Jane Lee, Joe Zhou, Po-Hsin Liu, Kevin Leong, Alex Zamora, Jose Padilla, Stephen Sarkozy, Richard Lai, William R. Deal

Institution: Northrop Grumman (United States)

Language: English

Topic: Radio Frequency Integrated Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: Defense Advanced Research Projects Agency

Award: G4439862006

OpenAlex ID: W1998340256

FWCI: 17.4

Cites: 10

Cited by: 429

Related to: 10