Work

Fabrication of InP HEMT devices with extremely high Fmax

Year: 2008

Type: conference-paper

Source: Conference proceedings. ... International Conference on Indium Phosphide and Related Materials

DOI: 10.1109/iciprm.2008.4703057

Authors: R. Lai, W.R. Deal, X.B. Mei, W. Yoshida, J. Lee, L. Dang, J. Wang, Y. M. Kim, P.H. Liu, V. Radisic, M. Lange, T. Gaier, L. Samoska, A. Fung

Institutions: Northrop Grumman (United States), Jet Propulsion Laboratory

Language: English

Topic: Radio Frequency Integrated Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: Defense Advanced Research Projects Agency

OpenAlex ID: W2054377345

FWCI: 8.056

Cites: 5

Cited by: 40

Related to: 10