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Linh Dang

Observed name: L. Dang
ORCID: 0000-0002-3892-5469
Observed ORCID: 0000-0002-3892-5469
OpenAlex ID: A5114777898
Demonstration of a 311-GHz Fundamental Oscillator Using InP HBT Technology
2007 · V. Radisic, D. Sawdai, et al. · IEEE Transactions on Microwave Theory and Techniques · 41
Fabrication of InP HEMT devices with extremely high Fmax
2008 · R. Lai, W.R. Deal, et al. · Conference proceedings. ... International Conference on Indium Phosphide and Related Materials · 40
35-nm InP HEMT SMMIC Amplifier With 4.4-dB Gain at 308 GHz
2007 · X. B. Mei, W. Yoshida, et al. · IEEE Electron Device Letters · 40
Demonstration of 184 and 255-GHz Amplifiers Using InP HBT Technology
2008 · V. Radisic, D. Sawdai, et al. · IEEE Microwave and Wireless Components Letters · 24
A 0.25 $\mu$m InP DHBT 200 GHz+ Static Frequency Divider
2010 · Matt D'Amore, Cedric Monier, et al. · IEEE Journal of Solid-State Circuits · 19
High-Speed InP HBT Technology for Advanced Mixed-signal and Digital Applications
2007 · C. Monier, D. Scott, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 18
35nm InP HEMT for Millimeter and Sub-Millimeter Wave Applications
2007 · X. B. Mei, W. Yoshida, et al. · Conference proceedings. ... International Conference on Indium Phosphide and Related Materials · 13
High Gain G-Band MMIC Amplifiers Based on Sub-50 nm Gate Length InP HEMT
2007 · P.H. Liu, W. Yoshida, et al. · Conference proceedings. ... International Conference on Indium Phosphide and Related Materials · 11
Sub-Micrometer InP/InGaAs Heterojunction Bipolar Transistors with fT = 400 GHz and fmax < 500 GHz
2006 · D.W. Scott, P.C. Chang, et al. · Conference proceedings. ... International Conference on Indium Phosphide and Related Materials · 11
172 GHz divide-by-two circuit using a 0.25-µm InP HBT technology
2009 · C. Monier, M. D'Amore, et al. · Conference proceedings. ... International Conference on Indium Phosphide and Related Materials · 10
InAs/InGaAs composite-channel HEMT on InP: Tailoring InGaAs thickness for performance
2008 · M. D. Lange, X. B. Mei, et al. · Conference proceedings. ... International Conference on Indium Phosphide and Related Materials · 10
Sub-50NM InGaAs/InAlAs/InP HEMT for sub-millimeter wave power amplifier applications
2010 · X. B. Mei, V. Radisic, et al. · Conference proceedings. ... International Conference on Indium Phosphide and Related Materials · 4
Incorporation of BCB into Wafer-Scale Assembly MMIC's
2010 · David M. Eaves, Patty Chang-Chien, et al. · ECS Transactions · 4
InP double heterojunction bipolar transistor technology for 311 GHz oscillator and 255 GHz amplifier
2008 · Dennis W. Scott, Donald Sawdai, et al. · Conference proceedings. ... International Conference on Indium Phosphide and Related Materials · 2
Incorporation of BCB into Wafer-Scale Assembly MMIC's
2010 · David M. Eaves, Patty Chang-Chien, et al. · ECS Meeting Abstracts · 1
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InP Heterojunction Bipolar Transistor Amplifiers to 255 GHz
2009 · V. Radisic, D. Sawdai, et al. · NASA Technical Reports Server (NASA)
Advanced Processing Techniques for Sub-Millimeter Wave MMICs
2008 · Jansen J. Uyeda, Xiaobing (Gerry) Mei, et al. · ECS Meeting Abstracts
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Multiple Level Plated Gold Interconnect for HEMT Compaction
2006 · Jansen Uyeda, Jennifer Wang, et al. · ECS Meeting Abstracts
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High Performance Sub-Micron InP/InGaAs Heterojunction Bipolar Transistor with Advanced Interconnect Technology
2006 · Ping-Chih Chang, Dennis Scott, et al. · ECS Meeting Abstracts
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Works count: 20
Citation count: 248
H-index: 10
I10-index: 11
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