Work

InAs/InGaAs composite-channel HEMT on InP: Tailoring InGaAs thickness for performance

Year: 2008

Type: conference-paper

Source: Conference proceedings. ... International Conference on Indium Phosphide and Related Materials

DOI: 10.1109/iciprm.2008.4702935

Authors: M. D. Lange, X. B. Mei, T. P. Chin, W. H. Yoshida, W. R. Deal, P.-H. Liu, J. Lee, J. J. Uyeda, L. Dang, J. Wang, W. Liu, D. T. Li, M. E. Barsky, Y.-M. Kim, V. Radisic, R. Lai

Institution: Northrop Grumman (United States)

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: Defense Advanced Research Projects Agency, Army Research Laboratory

OpenAlex ID: W1978760563

FWCI: 1.422

Cites: 15

Cited by: 10

Related to: 10