High Performance Sub-Micron InP/InGaAs Heterojunction Bipolar Transistor with Advanced Interconnect Technology
Year: 2006
Type: conference-abstract
Source: ECS Meeting Abstracts
Institution: Northrop Grumman (United States)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W4253577352
