Relationship between interfacial nitrogen concentration and activation energies of fixed-charge trapping and interface state generation under bias-temperature stress condition
Year: 2003
Type: article
Source: Applied Physics Letters
DOI: 10.1063/1.1537053
Authors: Shyue Seng Tan, T. P. Chen, C. H. Ang, L. Chan
Institution: Nanyang Technological University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W1990804858