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C. H. Ang

Observed names: C H Ang, C.H Ang, C.H. Ang, Chow-Hoe Ang
Observed institution: National University of Singapore
ORCID: 0000-0003-0703-8522
Observed ORCID: 0000-0003-0703-8522
OpenAlex ID: A5103246789
Energy gap and band alignment for (HfO2)x(Al2O3)1−x on (100) Si
2002 · H. Y. Yu, M. F. Li, et al. · Applied Physics Letters · 318
Dynamic NBTI of PMOS transistors and its impact on device lifetime
2003 · G. Chen, K.Y. Chuah, et al. · IEEE International Reliability Physics Symposium proceedings · 189
Dynamic NBTI of p-MOS transistors and its impact on MOSFET scaling
2002 · G. Chen, M.F. Li, et al. · IEEE Electron Device Letters · 170
Thermal stability of (HfO2)x(Al2O3)1−x on Si
2002 · H. Y. Yu, N. Wu, et al. · Applied Physics Letters · 94
Nitrogen-enhanced negative bias temperature instability: An insight by experiment and first-principle calculations
2003 · Shyue Seng Tan, T. P. Chen, et al. · Applied Physics Letters · 71
Fast and slow dynamic NBTI components in p-MOSFET with sion dielectric and their impact on device life-time and circuit application
2005 · T. Yang, M.F. Li, et al. · Symposium on VLSI Technology · 62
Interface trap passivation effect in NBTI measurement for p-MOSFET with SiON gate dielectric
2005 · T. Yang, C. Shen, et al. · IEEE Electron Device Letters · 49
Relationship between interfacial nitrogen concentration and activation energies of fixed-charge trapping and interface state generation under bias-temperature stress condition
2003 · Shyue Seng Tan, T. P. Chen, et al. · Applied Physics Letters · 42
Fast DNBTI components in p-MOSFET with SiON dielectric
2005 · T. Yang, C. Shen, et al. · IEEE Electron Device Letters · 38
Linear relationship between H+-trapping reaction energy and defect generation: Insight into nitrogen-enhanced negative bias temperature instability
2003 · Shyue Seng Tan, T. P. Chen, et al. · Applied Physics Letters · 23
Atomic Modeling of Nitrogen Neighboring Effect on Negative Bias Temperature Instability of pMOSFETs
2004 · S.S. Tan, T.P. Chen, et al. · IEEE Electron Device Letters · 21
Neighboring effect in nitrogen-enhanced negative bias temperature instability
2003 · Shyue Seng Tan, Tu Pei Chen, et al. · International Conference on Solid State Devices and Materials (SSDM) · 19
Suppression of Nitridation-Induced Interface Traps and Hole Mobility Degradation by Nitrogen Plasma Nitridation
2002 · C. H. Ang, S. S. Tan, et al. · Electrochemical and Solid-State Letters · 17
Strain analysis in silicon substrates under uniaxial and biaxial stress by convergent beam electron diffraction
2005 · Suey Li Toh, K. P. Loh, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 16
Dependence of barrier height and effective mass on nitrogen concentration at SiOxNy/Si interface and gate oxide thickness
2005 · C Y Ng, T P Chen, et al. · Smart Materials and Structures · 15
Effects of post-deposition anneal on the electrical properties of Si3N4 gate dielectric
2002 · W.H. Lin, K.L. Pey, et al. · IEEE Electron Device Letters · 15
A new waveform-dependent lifetime model for dynamic NBTI in PMOS transistor
2004 · Shyue Seng Tin, T.P. Chen, et al. · IEEE International Reliability Physics Symposium proceedings · 11
A comparative study of radiation- and stress-induced leakage currents in thin gate oxides
2000 · C H Ang, C H Ling, et al. · Semiconductor Science and Technology · 7
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Reduction of Local Mechanical Stress in a Transistor Using Si[sub 3]N[sub 4]/SiO[sub x]N[sub y] Contact ESL
2005 · Suey Li Toh, K. P. Loh, et al. · Electrochemical and Solid-State Letters · 6
Gate oxide thickness dependence of edge charge trapping in nmos transistors caused by charge injection under constant-current stress
2003 · T.P. Chen, Jiayi Huang, et al. · IEEE Transactions on Electron Devices · 6
The statistical distribution of percolation current for soft breakdown in ultrathin gate oxide
2003 · W.H. Lin, K.L. Pey, et al. · IEEE Electron Device Letters · 6
Origin of temperature-sensitive hole current at low gate voltage regime in ultrathin gate oxide
2000 · C. H. Ang, C. H. Ling, et al. · Journal of Applied Physics · 6
Negative-bias-temperature-instability (NBTI) for p/sup +/-gate pMOSFET with ultra-thin plasma-nitrided gate dielectrics
2003 · Shyue-Seng Tan, Tupei Chen, et al. · International Symposium on Plasma Process-Induced Damage · 4
Influence of interfacial nitrogen on edge charge trapping at the interface of gate oxide/drain extension in metal–oxide–semiconductor transistors
2003 · T. P. Chen, J. Y. Huang, et al. · Applied Physics Letters · 4
Characterization of interface degradation in deep submicron MOSFETs by gate-controlled-diode measurement
2002 · J Huang, T.P Chen, et al. · Microelectronics Journal · 4
Works count: 43
Citation count: 1,238
H-index: 15
I10-index: 17
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