Work

Dynamic NBTI of PMOS transistors and its impact on device lifetime

Year: 2003

Type: conference-paper

Source: IEEE International Reliability Physics Symposium proceedings

DOI: 10.1109/relphy.2003.1197745

Authors: G. Chen, K.Y. Chuah, M.F. Li, D.S.H. Chan, C.H. Ang, J.Z. Zheng, Y. Jin, D.L. Kwong

Institutions: National University of Singapore, The University of Texas at Austin

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: National University of Singapore

OpenAlex ID: W2149263288

FWCI: 14.35

Cites: 23

Cited by: 189

Related to: 10