Author

D.S.H. Chan

Observed names: D S H Chan, D. Chan, D. S. H. Chan, D. Siu-Hung Chan, D.S.H Chan, D. S. H. Chan, DSH Chan

Observed institutions: Agency for Science, Technology and Research, Data Storage Institute, National Yang Ming Chiao Tung University, National Taiwan University of Science and Technology, National University of Singapore, Hong Kong University of Science and Technology, Institute of Microelectronics, University of Salford, The University of Texas at Austin

OpenAlex ID: A5111593508

Analytical methods for the extraction of solar-cell single- and double-diode model parameters from I-V characteristics

1987 · D.S.H. Chan, J.C.H. Phang · IEEE Transactions on Electron Devices · 707

Accurate analytical method for the extraction of solar cell model parameters

1984 · J.C.H. Phang, D.S.H. Chan, et al. · Electronics Letters · 433

A comparative study of extraction methods for solar cell model parameters

1986 · D.S.H. Chan, J.R. Phillips, et al. · Solid-State Electronics · 379

Non‐Volatile Polymer Memory Device Based on a Novel Copolymer of N‐Vinylcarbazole and Eu‐Complexed Vinylbenzoate

2005 · Q. Ling, Y. Song, et al. · Advanced Materials · 257

Electrical Conductance Tuning and Bistable Switching in Poly( N -vinylcarbazole)−Carbon Nanotube Composite Films

2009 · Gang Liu, Qi-Dan Ling, et al. · ACS Nano · 192

Dynamic NBTI of PMOS transistors and its impact on device lifetime

2003 · G. Chen, K.Y. Chuah, et al. · IEEE International Reliability Physics Symposium proceedings · 189

Fermi Pinning-Induced Thermal Instability of Metal-Gate Work Functions

2004 · H.Y. Yu, C. Ren, et al. · IEEE Electron Device Letters · 131

Non-volatile WORM memory device based on an acrylate polymer with electron donating carbazole pendant groups

2006 · E.Y.H. Teo, Q.D. Ling, et al. · Organic Electronics · 112

A TaN– $hbox HfO_2$ –Ge pMOSFET With Novel $hbox SiH_4$ Surface Passivation

2004 · N. Wu, Q. Zhang, et al. · IEEE Electron Device Letters · 111

Schottky-Barrier S/D MOSFETs With High- $Kappa$ Gate Dielectrics and Metal-Gate Electrode

2004 · S. Zhu, H.Y. Yu, et al. · IEEE Electron Device Letters · 106

Nonvolatile Flash Memory Device Using Ge Nanocrystals Embedded in HfAlO High- $kappa$ Tunneling and Control Oxides: Device Fabrication and Electrical Performance

2004 · J.H. Chen, Y.Q. Wang, et al. · IEEE Transactions on Electron Devices · 99

Improvement in the hole collection of polymer solar cells by utilizing gold nanoparticle buffer layer

2008 · S.W. Tong, C.F. Zhang, et al. · Chemical Physics Letters · 92

A direct method for the extraction of diffusion length and surface recombination velocity from an EBIC line scan: planar junction configuration

1995 · D.S.H. Chan, V.K.S. Ong, et al. · IEEE Transactions on Electron Devices · 88

Bistable electrical switching and write-once read-many-times memory effect in a donor-acceptor containing polyfluorene derivative and its carbon nanotube composites

2007 · Gang Liu, Qi-Dan Ling, et al. · Journal of Applied Physics · 87

Electrical conductivity switching and memory effects in poly(N-vinylcarbazole) derivatives with pendant azobenzene chromophores and terminal electron acceptor moieties

2011 · Gang Liu, Bin Zhang, et al. · Journal of Materials Chemistry · 84

High-performance MIM capacitor using ALD high-k HfO2-Al2O3 laminate dielectrics

2003 · Shi-Jin Ding, Hang Hu, et al. · IEEE Electron Device Letters · 77

A theoretical model for laser removal of particles from solid surfaces

1997 · Y.F. Lu, W.D. Song, et al. · Applied Physics A · 74

RF, DC, and reliability characteristics of ALD HfO/sub 2/-Al/sub 2/O/sub 3/ laminate MIM capacitors for Si RF IC applications

2004 · Shi-Jin Ding, Hang Hu, et al. · IEEE Transactions on Electron Devices · 72

Electrically Bistable Thin-Film Device Based on PVK and GNPs Polymer Material

2007 · Y. Song, Q. D. Ling, et al. · IEEE Electron Device Letters · 67

Simple tandem organic photovoltaic cells for improved energy conversion efficiency

2008 · Chunfu Zhang, Shi Wun Tong, et al. · Applied Physics Letters · 66

Negative U traps in HfO/sub 2/ gate dielectrics and frequency dependence of dynamic BTI in MOSFETs

2005 · C. Shen, M.F. Li, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 64

Thermal stability of nitrogen incorporated in HfNxOy gate dielectrics prepared by reactive sputtering

2004 · J. F. Kang, H. Y. Yu, et al. · Applied Physics Letters · 59

Fermi-Level Pinning Induced Thermal Instability in the Effective Work Function of TaN in $hbox TaN/SiO_2$ Gate Stack

2004 · C. Ren, H.Y. Yu, et al. · IEEE Electron Device Letters · 56

Random Telegraph Signal Noise in Gate-All-Around Si-FinFET With Ultranarrow Body

2006 · Y.F. Lim, Y.Z. Xiong, et al. · IEEE Electron Device Letters · 54

A Dual-Metal Gate Integration Process for CMOS With Sub-1-nm EOT $hbox HfO_2$ by Using HfN Replacement Gate

2004 · C. Ren, H.Y. Yu, et al. · IEEE Electron Device Letters · 54

Works count: 130

Citation count: 4,765

H-index: 33

I10-index: 61