Random Telegraph Signal Noise in Gate-All-Around Si-FinFET With Ultranarrow Body
Year: 2006
Type: article
Source: IEEE Electron Device Letters
Authors: Y.F. Lim, Y.Z. Xiong, N. Singh, R. Yang, Y. Jiang, D.S.H. Chan, W.Y. Loh, L.K. Bera, G.Q. Lo, N. Balasubramanian, D.-L. Kwong
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
Funder: National University of Singapore
OpenAlex ID: W2155609362