Work

Fermi-Level Pinning Induced Thermal Instability in the Effective Work Function of TaN in $hbox TaN/SiO_2$ Gate Stack

Year: 2004

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2004.824251

Authors: C. Ren, H.Y. Yu, J.F. Kang, Y.T. Hou, M.-F. Li, W.D. Wang, D.S.H. Chan, D.-L. Kwong

Institutions: National University of Singapore, Peking University, Institute of Materials Research and Engineering

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2144802462

FWCI: 13.3

Cites: 13

Cited by: 56

Related to: 10