Year: 1989
Type: article
Abstract: The chemical preparation of GaSb(001) substrates was performed by Br 2 -HCl-HNO 3 -CH 3 COOH solution. The removed layer thickness was evaluated as a function of the constituent concentrations and the etching time. The surface quality was controlled by SEM, RHEED and AES. With this treatment, excellent surface morphology of substrates and growth film is obtained.
Language: English
Field: Materials Science
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W1990809839