Author

Louis Lassabatere

Observed names: L Lassabatere, L Lassabatère, L. LASSABATERE, L. Lassabatere, L. Lassabatère, L. Lassabatére, Lassabatere, L, Lassabatere, L., ∗|L. Lassabatere

Institutions: Institut d'Électronique et des Systèmes, Université Montpellier 2

Observed institutions: Centre National de la Recherche Scientifique, Université de Montpellier, Institut d'Électronique et des Systèmes, Observatoire Océanologique de Banyuls-sur-Mer, Université Montpellier 2

OpenAlex ID: A5070453067

Structure, surface composition, and electronic properties of β-In2S3 and β-In2−xAlxS3

2001 · N. Kamoun, S. Belgacem, et al. · Journal of Applied Physics · 93

Accommodation of lattice mismatch and threading of dislocations in GaSb films grown at different temperatures on GaAs (001)

1994 · J.M. Kang, M. Nouaoura, et al. · Journal of Crystal Growth · 58

Comparative studies between the growth characteristics of Bi2Te3 thin films deposited on SiO2, Si(100) and Si(111)

1996 · M. Ferhat, B. Liautard, et al. · Journal of Crystal Growth · 47

The Kelvin probe method for work function topographies: technical problems and solutions

1984 · J Bonnet, L Soonckindt, et al. · Vacuum · 34

Fermi level pinning on (110) GaAs surfaces studied by CPD and SPV topographies

1981 · J. M. Palau, E. Testemale, et al. · Journal of Vacuum Science and Technology · 32

The composition and temperature dependences of the fundamental band gap in ZnSxSe1−x alloys

1979 · L. Soonckindt, D. Etienne, et al. · Surface Science · 25

GaSb/GaAs heteroepitaxy characterized as a stress-free system

1991 · Claude Raisin, André Rocher, et al. · Applied Surface Science · 22

Fermi level pinning by interface states: A calculation of the height and the shape of the Schottky barrier

1985 · J.M. Palau, A. Ismail, et al. · Solid-State Electronics · 20

Optical investigations of a GaSb-AlSb single quantum well

1987 · C. Raisin, L. Lassabatere, et al. · Solid State Communications · 19

Work function measurements during growth of ultra thin films of SiO2 on characterized silicon surfaces

1984 · C. Raisin, E. Vieujot-Testemale, et al. · Solid-State Electronics · 18

Formation de l'interface métal/InP et de diodes Schottky sur InP

1984 · A. Ismail, J.M. Palau, et al. · Revue de Physique Appliquée · 18

Silver Schottky diodes on Kelvin, AES and LEED characterized (100)surfaces of GaAs cleaned by ion bombardment

1982 · J.M. Palau, E. Testemale, et al. · Solid-State Electronics · 18

Problems relevant to the use of optical pyrometers for substrate temperature measurements and controls in molecular beam epitaxy

1995 · M. Nouaoura, L. Lassabatere, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 17

Chemical preparation of GaSb(001) substrates prior to MBE

1989 · F W O Da Silva, C Raisin, et al. · Semiconductor Science and Technology · 17

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On the interest of a current amplifier associated with a Kelvin vibrating capacitor

1977 · J Bonnet, J M Palau, et al. · Journal of Physics E Scientific Instruments · 17

A study of the cleaved InP surface by CPD and SPV topographies

1985 · A. Ismail, A. Ben Brahim, et al. · Surface Science · 16

Comparison between GaAs(110) and InP(110) surface properties induced by cleavage defects and by oxygen adsorption

1985 · A. Ismail, A. Ben Brahim, et al. · Surface Science Letters · 16

Structure, surface composition, and electronic properties of CuInS2 and CuIn(1−x)AlxS2

2002 · N. Kamoun, N. Jebbari, et al. · Journal of Applied Physics · 15

Formation and properties of (Au, Al, Ag, In) (InP-GaAs) Schottky diodes; contribution of the semiconductor surface to the diode characteristics