Work

Comparison between GaAs(110) and InP(110) surface properties induced by cleavage defects and by oxygen adsorption

Year: 1985

Type: article

Source: Surface Science

DOI: 10.1016/0039-6028(85)90895-7

Authors: A. Ismail, A. Ben Brahim, J.M. Palau, L. Lassabatère

Institution: Université de Montpellier

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4246330458

FWCI: 1.917

Cites: 8

Cited by: 14

Related to: 10