Work

Kinase detection with gallium nitride based high electron mobility transistors

Year: 2013

Type: article

Abstract: A label-free kinase detection system was fabricated by the adsorption of gold nanoparticles functionalized with kinase inhibitor onto AlGaN/GaN high electron mobility transistors (HEMTs). The HEMTs were operated near threshold voltage due to the greatest sensitivity in this operational region. The Au NP/HEMT biosensor system electrically detected 1 pM SRC kinase in ionic solutions. These results are pertinent to drug development applications associated with kinase sensing.

Source: Applied Physics Letters

DOI: 10.1063/1.4812987

Authors: Matthew S. Makowski, Isaac Bryan, Zlatko Sitar, Consuelo Arellano, Jinqiao Xie, Ramon Collazo, Albena Ivanisevic

Institutions: Purdue University West Lafayette, Indiana University School of Medicine, North Carolina State University, HexaTech (United States), Lampe Joint Department of Biomedical Engineering

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: bronze

Funders: National Science Foundation, North Carolina State University, National Institutes of Health, University of North Carolina at Chapel Hill, National Institute of General Medical Sciences, National Center for Research Resources, Division of Civil, Mechanical and Manufacturing Innovation

Awards: Indiana Clinical and Translational Science Institute-T32 Program TL1, Indiana Medical Scientist/Engineer Training Program, Surface Engineering of Gallium Nitride with Biomolecules

OpenAlex ID: W1995445607

FWCI: 0.818

Cites: 10

Cited by: 11

Related to: 10