Work

Epitaxialy defined (ED) FinFET: to reduce VT variability and enable multiple VT

Year: 2012

Type: conference-paper

Source: Conference digest

DOI: 10.1109/drc.2012.6256997

Authors: S. Mittal, S. Gupta, A. Nainani, M.C. Abraham, K. Schuegraf, S. Lodha, U. Ganguly

Institutions: Indian Institute of Technology Bombay, Applied Materials (United States)

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1997399059

FWCI: 1.65

Cites: 7

Cited by: 5

Related to: 10