Work

Initial Growth and Dislocation Accommodation of GaAs on Si(100) by Molecular Beam Epilaxy

Year: 1987

Type: article

Abstract: The nucleation and growth process of GaAs on Si has been studied by auger electron spectroscopy and transmission electron microscopy. At growth temperatures above 120°C, epitaxial growth begins with island formation, the size of which depends on the growth temperature. At low growth temperature(∼120°C) the epitaxial islands grow preferentially on Si surface terraces rather than on steps, and misfit dislocations are introduced at steps where the leading edges of growing islands come into contact with each other.

Source: Japanese Journal of Applied Physics

DOI: 10.1143/jjap.26.l584

Authors: Hidetoshi Takasugi, Mitsuo Kawabe, Yoshio Bando

Institution: University of Tsukuba

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: bronze

OpenAlex ID: W1997515992

FWCI: 4.368

Cites: 13

Cited by: 41

Related to: 10