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Mitsuo Kawabe
Observed names:
M Kawabe,
Mitsuo KAWABE,
Mitsuo Kawabe Mitsuo Kawabe
Institution:
National Institute for Materials Science
Observed institutions:
Hiroshima University,
University of Tsukuba,
National Institute for Materials Science,
Japan Science and Technology Agency,
University of Milano-Bicocca,
The University of Osaka
show all 6
OpenAlex ID:
A5113589343
Works
153
Awards
2
Self-Assembly of Concentric Quantum Double Rings
2005
·
Takaaki Mano
, Takashi Kuroda
, et al.
·
Nano Letters
·
389
Low-Temperature Cleaning of GaAs Substrate by Atomic Hydrogen Irradiation
1991
·
Takeyoshi Sugaya Takeyoshi Sugaya
, Mitsuo Kawabe Mitsuo Kawabe
·
Japanese Journal of Applied Physics
·
161
PDF
Fabrication of ultra-high density InAs-stacked quantum dots by strain-controlled growth on InP(311)B substrate
2002
·
Kouichi Akahane
, Naoki Ohtani
, et al.
·
Journal of Crystal Growth
·
135
Self-Annihilation of Antiphase Boundary in GaAs on Si(100) Grown by Molecular Beam Epitaxy
1987
·
Mitsuo Kawabe
, Toshio Ueda
·
Japanese Journal of Applied Physics
·
132
PDF
Effects of Be and Si on disordering of the AlAs/GaAs superlattice
1985
·
Mitsuo Kawabe
, Norisato Shimizu
, et al.
·
Applied Physics Letters
·
87
Highly packed InGaAs quantum dots on GaAs(311)B
1998
·
Kouichi Akahane
, Takahiro Kawamura
, et al.
·
Applied Physics Letters
·
77
Molecular Beam Epitaxy of Controlled Single Domain GaAs on Si (100)
1986
·
Mitsuo Kawabe
, Toshio Ueda
·
Japanese Journal of Applied Physics
·
72
PDF
Disordering of Si-Doped AlAs/GaAs Superlattice by Annealing
1984
·
Mitsuo Kawabe
, Nobuyuki Matsuura
, et al.
·
Japanese Journal of Applied Physics
·
72
PDF
Initial Stage and Domain Structure of GaAs Grown on Si(100) by Molecular Beam Epitaxy
1987
·
Mitsuo Kawabe
, Toshio Ueda
, et al.
·
Japanese Journal of Applied Physics
·
70
Cracking Efficiency of Hydrogen with Tungsten Filament in Molecular Beam Epitaxy
1995
·
Atsushi Sutoh
, Yoshitaka Okada
, et al.
·
Japanese Journal of Applied Physics
·
60
PDF
Basic mechanisms of an atomic force microscope tip-induced nano-oxidation process of GaAs
1998
·
Yoshitaka Okada
, Shinji Amano
, et al.
·
Journal of Applied Physics
·
54
Growth modes in atomic hydrogen-assisted molecular beam epitaxy of GaAs
1995
·
Yoshitaka Okada
, Tomoya Fujita
, et al.
·
Applied Physics Letters
·
52
Selective Growth of GaAs by Molecular Beam Epitaxy
1992
·
Takeyoshi Sugaya
, Yoshitaka Okada Yoshitaka Okada
, et al.
·
Japanese Journal of Applied Physics
·
52
PDF
Low Temperature Surface Cleaning of InP by Irradiation of Atomic Hydrogen
1993
·
Yong Jin Chun
, Takeyoshi Sugaya
, et al.
·
Japanese Journal of Applied Physics
·
49
PDF
Low Dislocation Density GaAs on Vicinal Si(100) Grown by Molecular Beam Epitaxy with Atomic Hydrogen Irradiation
1992
·
Hirofumi Shimomura
, Yoshitaka Okada Yoshitaka Okada
, et al.
·
Japanese Journal of Applied Physics
·
49
PDF
Low dislocation density GaAs on Si heteroepitaxy with atomic hydrogen irradiation for optoelectronic integration
1993
·
Yoshitaka Okada
, Hirofumi Shimomura
, et al.
·
Journal of Applied Physics
·
47
Anisotropic Lateral Growth of GaAs by Molecular Beam Epitaxy
1989
·
Mitsuo Kawabe
, Takeyoshi Sugaya
·
Japanese Journal of Applied Physics
·
47
PDF
Ordering of high-quality InAs quantum dots on defect-free nanoholes
2006
·
Jong Su Kim
, Mitsuo Kawabe
, et al.
·
Applied Physics Letters
·
41
Observation of Aharonov-Bohm magnetoresistance oscillations in selectively doped GaAs-AlGaAs submicron structures
1987
·
Koji Ishibashi
, Yukihiko Takagaki
, et al.
·
Solid State Communications
·
41
Initial Growth and Dislocation Accommodation of GaAs on Si(100) by Molecular Beam Epilaxy
1987
·
Hidetoshi Takasugi
, Mitsuo Kawabe
, et al.
·
Japanese Journal of Applied Physics
·
41
PDF
Basic properties of GaAs oxide generated by scanning probe microscope tip-induced nano-oxidation process
2000
·
Yoshitaka Okada
, Yoshimasa Iuchi
, et al.
·
Journal of Applied Physics
·
38
Epitaxial Growth of GaN on Sapphire (0001) Substrates by Electron Cyclotron Resonance Molecular Beam Epitaxy
1995
·
Sung Hwan Cho
, Hirosi Sakamoto
, et al.
·
Japanese Journal of Applied Physics
·
36
Impurity effect on the creation of Ga vacancies in a Si-doped layer grown on Be-doped GaAs by molecular-beam epitaxy
1990
·
Jong-Lam Lee
, Long Wei
, et al.
·
Journal of Applied Physics
·
36
Photoluminescence of AlxGa1-xAs/AlyGa1-yAs Multiguantum Wells Grown by Pulsed Molecular Beam Epitaxy
1983
·
Mitsuo Kawabe
, Masahumi Kondo
, et al.
·
Japanese Journal of Applied Physics
·
32
Formation of High-Density Quantum Dot Arrays by Molecular Beam Epitaxy
1997
·
Mitsuo Kawabe
, Yong Jin Chun
, et al.
·
Japanese Journal of Applied Physics
·
31
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Works count:
153
Citation count:
2,913
H-index:
26
I10-index:
70
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