Work

Low dislocation density GaAs on Si heteroepitaxy with atomic hydrogen irradiation for optoelectronic integration

Year: 1993

Type: article

Source: Journal of Applied Physics

DOI: 10.1063/1.354029

Authors: Yoshitaka Okada, Hirofumi Shimomura, Mitsuo Kawabe

Institution: University of Tsukuba

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1998540663

FWCI: 3.189

Cites: 23

Cited by: 47

Related to: 10