Year: 1984
Type: article
Abstract: Effect of Si-doping levels and annealing temperature on disordering of 150-Å AlAs/150-Å GaAs superlattices is studied. The doping level of 4×1018 cm-3 cause disorder for 800°C, 2 h annealing, while the doping level of 1×1018 cm-3 does not induce disorder on this annealing condition. A superlattice which is doped with 1×1019 Si cm-3 disintegrates after 650°C, 2 h annealing and the diffusion coefficient of Al–Ga interdiffusion is estimated to be 3×10-17 cm2s-1. For 800°C, 2 h annealing the two undoped AlAs/GaAs layers adjacent to the doped region are disordered by Si diffusion.
DOI: 10.1143/jjap.23.l623
Institution: University of Tsukuba
Language: English
Subfield: Atomic and Molecular Physics, and Optics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W2022018454