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Yasuo Nannichi

Universal Passivation Effect of (NH4)2Sx Treatment on the Surface of III-V Compound Semiconductors
1991 · Haruhiro Oigawa, Jia-Fa Fan, et al. · Japanese Journal of Applied Physics · 249
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The Effect of (NH4)2S Treatment on the Interface Characteristics of GaAs MIS Structures
1988 · Jia-Fa Fan, Haruhiro Oigawa, et al. · Japanese Journal of Applied Physics · 216
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A GaAs-AlxGa1-xAs Double Heterostructure Planar Stripe Laser
1991 · Hiroo YONEZU, Isamu SAKUMA, et al. · WORLD SCIENTIFIC eBooks · 208
A Model to Explain the Effective Passivation of the GaAs Surface by (NH4)2Sx Treatment
1988 · Yasuo Nannichi, Jia-Fa Fan, et al. · Japanese Journal of Applied Physics · 187
Metal-Dependent Schottky Barrier Height with the (NH4)2Sx-Treated GaAs
1988 · Jia-Fa Fan, Haruhiro Oigawa, et al. · Japanese Journal of Applied Physics · 149
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Synchrotron radiation photoemission analysis for (NH4)2Sx-treated GaAs
1991 · Hirohiko Sugahara, Masaharu Oshima, et al. · Journal of Applied Physics · 131
Ohmic Contacts to Solution-Grown Gallium Arsenide
1969 · J. S. Harris, Y. Nannichi, et al. · Journal of Applied Physics · 116
Studies on an (NH4)2Sx-Treated GaAs Surface Using AES, LEELS and RHEED
1989 · Haruhiro Oigawa, Jia-Fa Fan, et al. · Japanese Journal of Applied Physics · 107
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Plasma CVD of Amorphous AlN from Metalorganic Al Source and Properties of the Deposited Films
1987 · Fumio Hasegawa, Tsuyoshi Takahashi, et al. · Japanese Journal of Applied Physics · 97
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Effects of Be and Si on disordering of the AlAs/GaAs superlattice
1985 · Mitsuo Kawabe, Norisato Shimizu, et al. · Applied Physics Letters · 87
Degradation mechanism of (Al · Ga)As double-heterostructure laser diodes
1974 · H. Yonezu, I. Sakuma, et al. · Applied Physics Letters · 76
Disordering of Si-Doped AlAs/GaAs Superlattice by Annealing
1984 · Mitsuo Kawabe, Nobuyuki Matsuura, et al. · Japanese Journal of Applied Physics · 72
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Temperature-dependent changes on the sulfur-passivated GaAs (111)A, (100), and (111)Bsurfaces
1991 · T. Scimeca, Y. Muramatsu, et al. · Physical review. B, Condensed matter · 65
Marked Reduction of the Surface/Interface States of GaAs by (NH4)2Sx Treatment
1989 · Jia-Fa Fan, Yasushi Kurata, et al. · Japanese Journal of Applied Physics · 65
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Reflection high-energy electron diffraction and x-ray photoelectron spectroscopic study on (NH4)2Sx-treated GaAs (100) surfaces
1989 · Hiroyuki Hirayama, Yoshishige Matsumoto, et al. · Applied Physics Letters · 59
Pd-on-GaAs Schottky Contact: Its Barrier Height and Response to Hydrogen
1991 · Heng-Yong Nie Heng-Yong Nie, Yasuo Nannichi Yasuo Nannichi · Japanese Journal of Applied Physics · 57
Phase Transition between c (4×2) and p (2×2) Structures of the Si(100) Surface at 6 K Caused by the Fluctuation of Phase Defects on Dimer Rows due to Dimer Flip-Flop Motion
1996 · Hidemi Shigekawa, Koji Miyake, et al. · Japanese Journal of Applied Physics · 50
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Bonding states of chemisorbed sulfur atoms on GaAs
1991 · Hirohiko Sugahara, Masaharu Oshima, et al. · Surface Science · 48
New Stripe Geometry Laser with High Quality Lasing Characteristics by Horizontal Transverse Mode Stabilization –A Refractive Index Guiding with Zn Doping
1977 · Hiroo Yonezu, Yoshishige Matsumoto, et al. · Japanese Journal of Applied Physics · 48
Reduction of Schottky barrier heights by surface oxidation of GaAs and its influence on DLTS signals for the midgap level EL2
1988 · Fumio Hasegawa, Masaaki Onomura, et al. · Solid-State Electronics · 40
Evidence for the passivation effect in (NH4)2Sx-treated GaAs observed by slow positrons
1991 · Jong-Lam Lee, Long Wei, et al. · Applied Physics Letters · 39
Properties of GaP Schottky barrier diodes at elevated temperatures
1969 · Y. Nannichi, G.L. Pearson · Solid-State Electronics · 39
Oxidation of Sulfur-Treated GaAs Surfaces Studied by Photoluminescence and Photoelectron Spectroscopy
1993 · Masaharu Oshima, Tom Scimeca, et al. · Japanese Journal of Applied Physics · 35
Rapid Degradation in Double-Heterostructure Lasers. I. Proposal of a New Model for the Directional Growth of Dislocation Networks
1975 · Junji Matsui, Koichi Ishida, et al. · Japanese Journal of Applied Physics · 35
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Chemistry of S/GaAs and metal/S/GaAs systems
1993 · Hirohiko Sugahara, Masaharu Oshima, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 34
Works count: 125
Citation count: 2,957
H-index: 29
I10-index: 50
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