Year: 1989
Type: article
Abstract: MIS capacitors have been fabricated on (NH4)2S x -treated GaAs using a SiO x insulator prepared by conventional resistive-heating evaporation. The MIS interface state density was found to be about 1.2×1011 cm-2·eV-1 in a wide range of the band gap, which is two orders of magnitude less than that on the as-etched GaAs.
Authors: Jia-Fa Fan, Yasushi Kurata, Yasuo Nannichi
Institution: University of Tsukuba
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W2011857415