Work

Synchrotron radiation photoemission analysis for (NH4)2Sx-treated GaAs

Year: 1991

Type: article

Source: Journal of Applied Physics

DOI: 10.1063/1.348380

Authors: Hirohiko Sugahara, Masaharu Oshima, Haruhiro Oigawa, Hidemi Shigekawa, Yasuo Nannichi

Institutions: NTT (Japan), University of Tsukuba

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2017852015

FWCI: 9.078

Cites: 22

Cited by: 131

Related to: 10