Work

Impurity effect on the creation of Ga vacancies in a Si-doped layer grown on Be-doped GaAs by molecular-beam epitaxy

Year: 1990

Type: article

Source: Journal of Applied Physics

DOI: 10.1063/1.346992

Authors: Jong-Lam Lee, Long Wei, Shoichiro Tanigawa, Mitsuo Kawabe

Institution: University of Tsukuba

Language: English

Topic: Muon and positron interactions and applications

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2003128571

FWCI: 2.516

Cites: 27

Cited by: 36

Related to: 10