Work

Initial Stage and Domain Structure of GaAs Grown on Si(100) by Molecular Beam Epitaxy

Year: 1987

Type: article

Source: Japanese Journal of Applied Physics

DOI: 10.1143/jjap.26.l114

Authors: Mitsuo Kawabe, Toshio Ueda, Hidetoshi Takasugi

Institution: University of Tsukuba

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2003258185

FWCI: 7.917

Cites: 10

Cited by: 70

Related to: 10