Basic properties of GaAs oxide generated by scanning probe microscope tip-induced nano-oxidation process
Year: 2000
Type: article
Source: Journal of Applied Physics
DOI: 10.1063/1.373788
Institutions: University of Tsukuba, Stanford University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2049650293