Microstructure and electrical properties of Sn nanocrystals in thin, thermally grown SiO2 layers formed via low energy ion implantation
Year: 1998
Type: article
Source: Journal of Applied Physics
DOI: 10.1063/1.368199
Institution: Fujitsu (Japan)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W1998103401