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T. Futatsugi

Observed names: Futatsugi, Toshiro, T Futatsugi, Toshiro FUTATSUGI, Toshiro Futatsugi, Toshiro Futatsugi Toshiro Futatsugi, 俊郎 二木
OpenAlex ID: A5110161976
Room temperature operation of Si single-electron memory with self-aligned floating dot gate
1997 · Anri Nakajima, Toshiro Futatsugi, et al. · Applied Physics Letters · 162
Self-assembled structures of closely stacked InAs islands grown on GaAs by molecular beam epitaxy
1997 · Yoshiaki Nakata, Yoshihiro Sugiyama, et al. · Journal of Crystal Growth · 86
Microstructure and electrical properties of Sn nanocrystals in thin, thermally grown SiO2 layers formed via low energy ion implantation
1998 · Anri Nakajima, Toshiro Futatsugi, et al. · Journal of Applied Physics · 71
Quantum Dot Infrared Photodetector Using Modulation Doped InAs Self-Assembled Quantum Dots
1999 · Naoto Horiguchi, Toshiro Futatsugi, et al. · Japanese Journal of Applied Physics · 56
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Coulomb blockade in Sb nanocrystals formed in thin, thermally grown SiO2 layers by low-energy ion implantation
1998 · Anri Nakajima, Hiroshi Nakao, et al. · Applied Physics Letters · 49
Formation of Sn nanocrystals in thin SiO2 film using low-energy ion implantation
1997 · Anri Nakajima, Toshiro Futatsugi, et al. · Applied Physics Letters · 47
Si single electron tunneling transistor with nanoscale floating dot stacked on a Coulomb island by self-aligned process
1997 · Anri Nakajima, Toshiro Futatsugi, et al. · Applied Physics Letters · 47
Narrow Photoluminescence Line Width of Closely Stacked InAs Self-Assembled Quantum Dot Structures
1997 · Yoshihiro Sugiyama, Yoshiaki Nakata, et al. · Japanese Journal of Applied Physics · 47
V/sub th/ fluctuation induced by statistical variation of pocket dopant profile
2002 · T. Tanaka, T. Usuki, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 42
Self-organized quantum dots and quantum dot lasers (invited)
1998 · H. Ishikawa, H. Shoji, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 41
Electron transport properties through InAs self-assembled quantum dots in modulation doped structures
1997 · N. Horiguchi, T. Futatsugi, et al. · Applied Physics Letters · 37
A Resonant-Tunneling Bipolar Transistor (RBT) –A New Functional Device with High Current Gain
1987 · Toshiro Futatsugi, Yasuhiro Yamaguchi, et al. · Japanese Journal of Applied Physics · 32
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Characteristics of spectral-hole burning of InAs self-assembled quantum dots
1998 · Y. Sugiyama, Y. Nakata, et al. · IEEE Journal of Selected Topics in Quantum Electronics · 30
Ultra thinning 300-mm wafer down to 7-µm for 3D wafer Integration on 45-nm node CMOS using strained silicon and Cu/Low-k interconnects
2009 · Y. S. Kim, A. Tsukune, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 25
High-Performance and Low-Power Bulk Logic Platform Utilizing FET Specific Multiple-Stressors with Highly Enhanced Strain and Full-Porous Low-k Interconnects for 45-nm CMOS Technology
2007 · T. Miyashita, K. Ikeda, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 22
Single electron charging of Sn nanocrystals in thin SiO/sub 2/ film formed by low energy ion implantation
2002 · A. Nakajima, T. Futatsugi, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 22
Room temperature operation of Si single-electron memory with self-aligned floating dot gate
2002 · A. Nakajima, T. Futatsugi, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 18
Si single-electron tunneling transistor with nanoscale floating dot stacked on a Coulomb island by self-aligned process
1999 · Anri Nakajima, Toshiro Futatsugi, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 18
A proposal of new floating-dot memory storing a small number of electrons with relatively long retention time at low voltage operations
1999 · Tatsuya Usuki, Toshiro Futatsugi, et al. · Microelectronic Engineering · 18
Tunneling study of the charge-density-wave state in 1T-TaS2 and 1T-TaSe2
1984 · S. Noutomi, T. Futatsugi, et al. · Solid State Communications · 18
Magneto-optical study of excitons in quantum wells, wires and dots in high magnetic fields
1998 · N. Miura, H. Kunimatsu, et al. · Physica B Condensed Matter · 17
Resonant tunneling bipolar transistors using InAlAs/InGaAs heterostructures
1989 · T. Futatsugi, Y. Yamaguchi, et al. · Journal of Applied Physics · 17
A resonant-tunneling bipolar transistor (RBT): A proposal and demonstration for new functional devices with high current gains
1986 · T. Futatsugi, Y. Yamaguchi, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 16
Observation of spectral hole burning in photocurrentspectrum of InAs self-assembled quantum dots embedded in pin diode
1997 · Y. Sugiyama, Y. Nakata, et al. · Electronics Letters · 14
20 Gbit/s AlGaAs/GaAs-HBT 2:1 selector and decision ICs
1991 · H. Hamano, T. Ihara, et al. · Electronics Letters · 13
Works count: 73
Citation count: 1,116
H-index: 18
I10-index: 28
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