Si single electron tunneling transistor with nanoscale floating dot stacked on a Coulomb island by self-aligned process
Year: 1997
Type: article
Source: Applied Physics Letters
DOI: 10.1063/1.119535
Institution: Fujitsu (Japan)
Language: English
Subfield: Atomic and Molecular Physics, and Optics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2018707356