Application of piezoresistance effect in highly uniaxially strained p‐Si and n‐Si for current‐carrier mobility increase
Year: 2008
Type: article
Abstract: Uniaxially strained channels occur in silicon p‐MOS transistors and n‐MOS transistors (IEDM Tech. Dig., pp. 61–64 (2002) and pp. 978–980 (2003) [1, 2]). Both longitudinal piezoresistance (PR) and transverse PR investigation in highly uniaxially strained p‐Si(B) and n‐Si(P) are presented. It is shown that the strong anisotropy of longitudinal PR and transverse PR are caused by the pressure‐induced change of isoenergetic surface shape, i.e. by the change of heavy‐hole effective mass and its anisotropy. In n‐Si the change of the longitudinal PR and transverse PR at X ∥ [100] is determined by both the change of the f‐transition probability with increasing pressure and the redistribution of electrons between the valleys with the effective mass m∥ (longitudinal PR) and m⊥ (transverse PR). (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Source: physica status solidi (b)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W2000473894