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V. V. Baidakov
Observed names:
V.V. Baidakov,
Valentyn Baidakov
Institutions:
National Technical University of Athens,
V.E. Lashkaryov Institute of Semiconductor Physics
Observed institutions:
National Academy of Sciences of Ukraine,
National Technical University of Athens,
V.E. Lashkaryov Institute of Semiconductor Physics
OpenAlex ID:
A5018946705
Metal‐Insulator Transition in Degenerately Doped Si and Ge under High Uniaxial Pressure
1996
·
V. V. Baidakov
, V. N. Ermakov
, et al.
·
physica status solidi (b)
·
7
Application of piezoresistance effect in highly uniaxially strained p‐Si and n‐Si for current‐carrier mobility increase
2008
·
Volodymyr Kolomoets
, Valentyn Baidakov
, et al.
·
physica status solidi (b)
·
4
Breakdown of Impurity States of As and Sb in Germanium at Uniaxial Compression
1984
·
V. V. Baidakov
, V. N. Ermakov
, et al.
·
physica status solidi (b)
·
4
Non-trivial transport phenomena in extremely strained silicon and germanium crystals
1995
·
V.V. Baidakov
, V.N. Ermakov
, et al.
·
Journal of Physics and Chemistry of Solids
·
3
Even hall effect in p-Ge
1974
·
P. I. Baranskii
, V. V. Baidakov
·
physica status solidi (a)
·
3
Even hall effect in n-Ge at the orientation of current along low symmetry axis
1971
·
P. I. Baranskii
, V. V. Baidakov
, et al.
·
physica status solidi (a)
·
3
Magnetic Field Dependence of Even Hall Effect in n‐Ge
1971
·
P. I. Baranskii
, V. V. Baidakov
, et al.
·
physica status solidi (b)
·
3
The ionisation of impurity states of Sb in Ge, connected with L‐ and X‐valleys of the conduction band
1982
·
P. I. Baranskii
, V. V. Baidakov
, et al.
·
physica status solidi (b)
·
2
Even hall effect at different ratios of light and heavy holes in p-Ge
1975
·
P. I. Baranskii
, V. V. Baidakov
, et al.
·
physica status solidi (a)
·
1
Transverse Magnetoresistance of Uniaxially Stressed p–Ge
1975
·
V. V. Baidakov
, A. I. Elizarov
, et al.
·
physica status solidi (a)
·
1
Hall Effect in Strongly Degenerate n‐Ge
1970
·
P. I. Baranskii
, V. V. Baidakov
·
physica status solidi (b)
·
1
Current Carriers Transport In High Uniaxially Strained Silicon
2010
·
V. V. Kolomoets
, V. V. Baidakov
, et al.
·
AIP conference proceedings
PDF
Strain‐induced nonlinear behavior of electron effective mass in degenerately doped n‐Si(P) under high uniaxial pressure X || [111]
2009
·
Vasyl Shenderovskii
, Valentyn Baidakov
, et al.
·
physica status solidi (b)
Even Hall Effect in n-Ge at the Orientation of Current along Low Symmetry Axis
1971
·
P. I. Baranskh
, V. V. Baidakov
, et al.
·
De Gruyter eBooks
Even Hall Effect in n-Ge at the Orientation of Current along Low Symmetry Axis
1971
·
P. I. Baranskii
, V. V. Baidakov
, et al.
·
De Gruyter eBooks
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Works count:
15
Citation count:
32
H-index:
3
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