Work

Hall Effect in Strongly Degenerate n‐Ge

Year: 1970

Type: article

Source: physica status solidi (b)

DOI: 10.1002/pssb.19700370255

Authors: P. I. Baranskii, V. V. Baidakov

Institution: National Academy of Sciences of Ukraine

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2115299524

FWCI:

Cites: 1

Cited by: 1

Related to: 10