Work

Novel approach to improve heat dissipation of AlGaN/GaN high electron mobility transistors with a Cu filled via under device active area

Year: 2014

Type: article

Source: Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena

DOI: 10.1116/1.4896593

Authors: Ya-Hsi Hwang, Tsung-Sheng Kang, Fan Ren, Stephen J. Pearton

Institution: University of Florida

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Science Foundation, U.S. Department of Defense

OpenAlex ID: W2000595918

FWCI: 0.642

Cites: 9

Cited by: 16

Related to: 10