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Tsung-Sheng Kang

Observed names: T. S. Kang, T.-S. Kang, T.S. Kang, Tsung Sheng Kang
OpenAlex ID: A5111632995
Isolation blocking voltage of nitrogen ion-implanted AlGaN/GaN high electron mobility transistor structure
2010 · C. F. Lo, T. S. Kang, et al. · Applied Physics Letters · 75
Characterization of the gate oxide of an AlGaN/GaN high electron mobility transistor
2011 · M. R. Holzworth, N. G. Rudawski, et al. · Applied Physics Letters · 35
Effect of source field plate on the characteristics of off-state, step-stressed AlGaN/GaN high electron mobility transistors
2011 · Lu Liu, Tsung Sheng Kang, et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 32
Investigation of traps in AlGaN/GaN high electron mobility transistors by sub-bandgap optical pumping
2015 · Tsung-Sheng Kang, Fan Ren, et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 25
Improvement of Off-State Stress Critical Voltage by Using Pt-Gated AlGaN/GaN High Electron Mobility Transistors
2011 · Chien-Fong Lo, Lu Liu, et al. · Electrochemical and Solid-State Letters · 23
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Nanocrack formation in AlGaN/GaN high electron mobility transistors utilizing Ti/Al/Ni/Au ohmic contacts
2017 · P.G. Whiting, N.G. Rudawski, et al. · Microelectronics Reliability · 21
Comparison of passivation layers for AlGaN/GaN high electron mobility transistors
2011 · R. C. Fitch, D. E. Walker, et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 17
Novel approach to improve heat dissipation of AlGaN/GaN high electron mobility transistors with a Cu filled via under device active area
2014 · Ya-Hsi Hwang, Tsung-Sheng Kang, et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 16
Monolithic Stacked FET with Stepped Channels for Future Logic Technologies
2024 · Chen Zhang, SeungMin Song, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 15
Transmission electron microscopy characterization of electrically stressed AlGaN/GaN high electron mobility transistor devices
2012 · Michael R. Johnson, David A. Cullen, et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 15
Effect of buffer layer structure on electrical and structural properties of AlGaN/GaN high electron mobility transistors
2011 · Chien-Fong Lo, L. Liu, et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 15
Under-gate defect formation in Ni-gate AlGaN/GaN high electron mobility transistors
2012 · P.G. Whiting, N.G. Rudawski, et al. · Microelectronics Reliability · 13
Erosion defect formation in Ni-gate AlGaN/GaN high electron mobility transistors
2017 · P.G. Whiting, M.R. Holzworth, et al. · Microelectronics Reliability · 11
Field-induced defect morphology in Ni-gate AlGaN/GaN high electron mobility transistors
2013 · M. R. Holzworth, N. G. Rudawski, et al. · Applied Physics Letters · 11
Effects of 2 MeV Ge+ irradiation on AlGaN/GaN high electron mobility transistors
2013 · Erica A. Douglas, Edward Bielejec, et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 11
Simulation and experimental study of ArF 193 nm laser lift-off AlGaN/GaN high electron mobility transistors
2011 · T. S. Kang, X. T. Wang, et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 10
Effects of silicon nitride passivation on isolation-blocking voltage in algan/gan high electron mobility transistors
2011 · Chien-Fong Lo, T. S. Kang, et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 10
Degradation of dc characteristics of InAlN/GaN high electron mobility transistors by 5 MeV proton irradiation
2012 · Chien-Fong Lo, L. Liu, et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 7
Thermal simulation of laser lift-off AlGaN/GaN high electron mobility transistors mounted on AlN substrates
2011 · T. S. Kang, C. F. Lo, et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 7
Identification of trap locations in AlGaN/GaN high electron mobility transistors by varying photon flux during sub-bandgap optical pumping
2015 · Tsung Sheng Kang, Yi-Hsuan Lin, et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 6
Performance of stacked nanosheet gate all around FET’s with EUV patterned gate and sheets
2021 · Indira Seshadri, Jennifer Church, et al. · Extreme Ultraviolet (EUV) Lithography · 5
Comparison of DC performance of Pt/Ti/Au- and Ni/Au-gated AlGaN/GaN high electron mobility transistors
2011 · Lu Liu, Chien-Fong Lo, et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 5
Improved Off-State Stress Critical Voltage on AlGaN/GaN High Electron Mobility Transistors Utilizing Pt/Ti/Au Based Gate Metallization
2011 · Chien-Fong Lo, Lu Liu, et al. · ECS Transactions · 3
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A Novel Approach to Improve Heat Dissipation of AlGaN/GaN High Electron Mobility Transistors with a Backside Cu Via
2015 · Ya-Hsi Hwang, Tsung-Sheng Kang, et al. · ECS Transactions · 2
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(Invited) Microstrucutural Characterizaton of Stressed AlGaN/GaN HEMT Devices
2014 · Monta Ray Holzworth, Patrick Whiting, et al. · ECS Transactions · 2
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Works count: 39
Citation count: 397
H-index: 12
I10-index: 17
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