Work

Transmission electron microscopy characterization of electrically stressed AlGaN/GaN high electron mobility transistor devices

Year: 2012

Type: article

Source: Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena

DOI: 10.1116/1.4766303

Authors: Michael R. Johnson, David A. Cullen, Lu Liu, Tsung Sheng Kang, Fan Ren, Chih-Yang Chang, Stephen J. Pearton, Soohwan Jang, J. Wayne Johnson, David J. Smith

Institutions: Arizona State University, Oak Ridge National Laboratory, University of Florida, Dankook University, Kopin Corporation (United States)

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2039322652

FWCI: 1.453

Cites: 15

Cited by: 15

Related to: 10