Work

Thermal simulation of laser lift-off AlGaN/GaN high electron mobility transistors mounted on AlN substrates

Year: 2011

Type: article

Source: Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena

DOI: 10.1116/1.3605298

Authors: T. S. Kang, C. F. Lo, L. Liu, R. Finch, F. Ren, X. T. Wang, E. Douglas, S. J. Pearton, S. T. Hung, C.-J. Chang

Institutions: University of Florida, Feng Chia University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: National Institute of Standards and Technology

OpenAlex ID: W2006136512

FWCI: 0.538

Cites: 15

Cited by: 7

Related to: 10