Work

Degradation of dc characteristics of InAlN/GaN high electron mobility transistors by 5 MeV proton irradiation

Year: 2012

Type: article

Abstract: The dc characteristics of InAlN/GaN high electron mobility transistors were measured before and after irradiation with 5 MeV protons at doses up to 2 × 1015 cm−2. The on/off ratio degraded by two orders of magnitude for the highest dose, while the subthreshold slope increased from 77 to 122 mV/decade under these conditions. There was little change in transconductance or gate or drain currents for doses up to 2 × 1013 cm−2, but for the highest dose the drain current and transconductance decreased by ∼40% while the reverse gate current increased by a factor of ∼6. The minority carrier diffusion length was around 1 μm independent of proton dose. The InAlN/GaN heterostructure is at least as radiation hard as its AlGaN/GaN counterpart.

Source: Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena

DOI: 10.1116/1.3698402

Authors: Chien-Fong Lo, L. Liu, T. S. Kang, Fan Ren, C. Schwarz, E. Flitsiyan, L. Chernyak, Hong-Yeol Kim, Jihyun Kim, Sang Pil Yun, O. Laboutin, Y. Cao, J. W. Johnson, S. J. Pearton

Institutions: University of Florida, University of Central Florida, Korea University, Korea Atomic Energy Research Institute, Kopin Corporation (United States)

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: green

Funders: National Science Foundation, U.S. Department of Defense, Multidisciplinary University Research Initiative, Air Force Office of Scientific Research

OpenAlex ID: W2020021493

FWCI: 0.802

Cites: 18

Cited by: 7

Related to: 10