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Improved Off-State Stress Critical Voltage on AlGaN/GaN High Electron Mobility Transistors Utilizing Pt/Ti/Au Based Gate Metallization

Year: 2011

Type: conference-paper

Abstract: The critical voltage for degradation of AlGaN/GaN high electron mobility transistors (HEMTs) employed with the Pt/Ti/Au gate metallization instead of the commonly used Ni/Au was significantly increased during the off-state stress. The typical critical voltage for HEMTs with Ni/Au gate metallization was around -60V. By sharp contrast, no critical voltage was observed for the HEMTs with Pt/Ti/Au gate metallization, even up to -100V, which was the instrumental limitation in this experiment. Both Schottky forward and reverse gate characteristics of the Ni/Au degraded once the gate voltage passed the critical voltage of around -60V. There was no degradation exhibited for the HEMTs with Pt-gated HEMTs.

Source: ECS Transactions

DOI: 10.1149/1.3629954

Authors: Chien-Fong Lo, Lu Liu, Tsung-Sheng Kang, Ryan Davies, Brent P. Gila, S. J. Pearton, I. I. Kravchenko, Oleg Laboutin, Yu Cao, Wayne Johnson, F. Ren

Institutions: University of Florida, Oak Ridge National Laboratory, Kopin Corporation (United States)

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: bronze

Funders: U.S. Department of Energy, Multidisciplinary University Research Initiative, Basic Energy Sciences, Air Force Office of Scientific Research, Oak Ridge National Laboratory

OpenAlex ID: W1998911397

FWCI: 1.789

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Cited by: 3

Related to: 10