Work

Experimental investigation of the electrical properties of atomic layer deposited hafnium-rich silicate films on n-type silicon

Year: 2006

Type: article

Source: Journal of Applied Physics

DOI: 10.1063/1.2358831

Authors: S. Dueñas, H. Castán, H. García, L. Bailón, K. Kukli, M. Ritala, M. Leskelä, M. Rooth, O. Wilhelmsson, A. Hårsta

Institutions: Universidad de Valladolid, University of Helsinki, University of Tartu, Uppsala University

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2000859519

FWCI: 1.686

Cites: 46

Cited by: 10

Related to: 10