Work

Nonvolatile Multilevel Resistive Switching in $ \hbox{Ar}^{+}$ Irradiated $\hbox{BiFeO}_{3}$ Thin Films

Year: 2012

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2012.2227666

Authors: Y. Shuai, X. Ou, W. Luo, N. Du, C. Wu, W. Zhang, D. Burger, C. Mayr, R. Schuffny, S. Zhou, M. Helm, H. Schmidt

Institutions: University of Electronic Science and Technology of China, State Key Laboratory of Electronic Thin Films and Integrated Devices, Helmholtz-Zentrum Dresden-Rossendorf, Chemnitz University of Technology, Technische Universität Dresden

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2000939560

FWCI: 2.801

Cites: 16

Cited by: 33

Related to: 10