Work

Selective polysilicon oxidation technology for VLSI isolation

Year: 1982

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/t-ed.1982.20743

Authors: N. Matsukawa, H. Nozawa, J. Matsunaga, S. Kohyama

Institution: Toshiba (Japan)

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2000958511

FWCI: 8.723

Cites: 10

Cited by: 38

Related to: 10