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Hiroshi Nozawa

Prospective Phase II Study of FOLFIRI for mCRC in Japan, Including the Analysis of UGT1A1*28/*6 Polymorphisms
2011 · Y. Okuyama, S. Hazama, et al. · Japanese Journal of Clinical Oncology · 53
A Thermionic Electron Emission Model for Charge Retention in SAMOS Structure
1982 · Hiroshi Nozawa, Susumu Kohyama · Japanese Journal of Applied Physics · 50
Ileosigmoid knot: case report and CT findings
2005 · Y. Hirano, T. Hara, et al. · Abdominal Imaging · 43
Selective polysilicon oxidation technology for VLSI isolation
1982 · N. Matsukawa, H. Nozawa, et al. · IEEE Transactions on Electron Devices · 38
A low power 46 ns 256 kbit CMOS static RAM with dynamic double word line
1984 · T. Sakurai, J. Matsunaga, et al. · IEEE Journal of Solid-State Circuits · 37
UGT1A1*6 , 1A7*3 , and 1A9*22 genotypes predict severe neutropenia in FOLFIRI ‐treated metastatic colorectal cancer in two prospective studies in Japan
2013 · Shoichi Hazama, Hideyuki Mishima, et al. · Cancer Science · 31
Imprint Model Based on Thermionic Electron Emission Under Local Fields in Ferroelectric Thin Films
1999 · Dai Nagasawa, Hiroshi Nozawa · Japanese Journal of Applied Physics · 27
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An EEPROM cell using a low barrier height tunnel oxide
1986 · H. Nozawa, N. Matsukawa, et al. · IEEE Transactions on Electron Devices · 24
Combined choriocarcinoma, neuroendocrine cell carcinoma and tubular adenocarcinoma in the stomach
2008 · Yasumitsu Hirano, Takuo Hara, et al. · World Journal of Gastroenterology · 22
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A 15nW standby power 64Kb CMOS RAM
1982 · K. Ochii, K. Hashimoto, et al. · Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference · 19
An experimental 5-V-only 256-kbit CMOS EEPROM with a high-performance single-polysilicon cell
1986 · J. Miyamoto, J. Tsujimoto, et al. · IEEE Journal of Solid-State Circuits · 13
Reliable CVD Inter-Poly Dielectrics for Advanced E&EEPROM
1985 · Seiichi Mori, Y. Mikata, et al. · Symposium on VLSI Technology · 11
Polyimide liftoff technology for high-density LSI metallization
1981 · Y. Homma, H. Nozawa, et al. · IEEE Transactions on Electron Devices · 11
Selective polysilicon oxidation technology for defect free isolation
1980 · J. Matsunaga, N. Matsukawa, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 11
Variable resistance polysilicon for high density CMOS RAM
1979 · T. Iizuka, H. Nozawa, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 11
1-Mbit virtually static RAM
1986 · K. Nogami, T. Sakurai, et al. · IEEE Journal of Solid-State Circuits · 10
A P-type buried layer for protection against soft errors in high density CMOS static RAMs
1984 · H. Momose, T. Wada, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 10
Middle-term prognosis in patients with ulcerative colitis who achieved clinical and endoscopic remission by budesonide rectal foam
2019 · Makoto Naganuma, Fumihito Hirai, et al. · PLoS ONE · 9
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A programmable 80ns 1Mb CMOS EPROM
1985 · S. Saito, S. Tanaka, et al. · Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference · 9
Characteristics and reliability of the SEPROM cell
1984 · H. Nozawa, Y. Niitsu, et al. · IEEE Transactions on Electron Devices · 8
An ultralow power 8Kx8-bit full CMOS RAM with a six-transistor cell
1982 · K. Ochii, K. Hashimoto, et al. · IEEE Journal of Solid-State Circuits · 8
International Workshop on Gate Insulator 2003
2003 · Steering Cor, Hiroshi lshiwara, et al. · 7
A Case Report of Basaloid-Squamous carcinoma of the Esophagus.
2000 · Shoichi Tsukayama, Makoto Hirano, et al. · 日本消化器外科学会雑誌 · 7
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Reliability Aspects of 100A Inter-Poly Dielectrics for High Density VLSI's
1986 · S. Mori, Motoyuki Sato, et al. · Symposium on VLSI Technology · 7
High density CMOS processing for a 16K-bit RAM
1979 · H. Nozawa, S. Nishimura, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 7
Works count: 86
Citation count: 592
H-index: 11
I10-index: 17
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