Highly selective etching for polysilicon and etch-induced damage to gate oxide with halogen-bearing electron-cyclotron-resonance plasma
Year: 1996
Type: article
Source: Journal of Applied Physics
DOI: 10.1063/1.363164
Institution: National Yang Ming Chiao Tung University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2001237758