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Ta‐Hsun Yeh

Observed names: T.H. Yeh, Ta-Hsun Yeh
Institution: Realtek (Taiwan)
OpenAlex ID: A5111931282
Amorphouslike chemical vapor deposited tungsten diffusion barrier for copper metallization and effects of nitrogen addition
1997 · Kow-Ming Chang, Ta-Hsun Yeh, et al. · Journal of Applied Physics · 55
Nitridation of fine grain chemical vapor deposited tungsten film as diffusion barrier for aluminum metallization
1997 · Kow-Ming Chang, Ta-Hsun Yeh, et al. · Journal of Applied Physics · 32
Highly selective etching for polysilicon and etch-induced damage to gate oxide with halogen-bearing electron-cyclotron-resonance plasma
1996 · Kow-Ming Chang, Ta-Hsun Yeh, et al. · Journal of Applied Physics · 30
The relaxation phenomena of positive charges in thin gate oxide during Fowler-Nordheim tunneling stress
1998 · Kow-Ming Chang, Chii-Horng Li, et al. · IEEE Transactions on Electron Devices · 12
Effects of gas ratio on electrical properties of electron-cyclotron-resonance nitride films grown at room temperature
1996 · Kow-Ming Chang, Jung-Yu Tsai, et al. · Journal of Applied Physics · 6
Thermal Stability of Amorphous-like WNx/W Bilayered Diffusion Barrier for Chemical Vapor Deposited-Tungsten/p+-Si Contact System
1999 · Kow-Ming Chang, I-Chung Deng, et al. · Japanese Journal of Applied Physics · 4
Dry etching of polysilicon with high selectivity using a chlorine-based plasma in an ECR reactor
1996 · K.M. Chang, T.H. Yeh, et al. · Materials Chemistry and Physics · 3
Systematic Analysis and Modeling of On-Chip Spiral Inductors for Complementary Metal Oxide Semiconductor Radio Frequency Integrated Circuits Applications
2006 · Mao-Chyuan Tang, Yean-Kuen Fang, et al. · Japanese Journal of Applied Physics · 2
A new simple and reliable method to form a textured Si surface for the fabrication of a tunnel oxide film
1998 · Kow-Ming Chang, Chii-Horng Li, et al. · IEEE Electron Device Letters · 2
Suppression of Fluorine Impurity in Blanket Chemical Vapor Deposited Tungsten Film for Via Fills with A Novel Two-step Deposition Technique
1997 · Kow-Ming Chang, Ta-Hsun Yeh, et al. · Japanese Journal of Applied Physics · 2
SiH4 ‐ WF 6 Gas‐Phase Nucleated Tungsten as an Adhesion Layer in Blanket Chemical Vapor Deposition for Ultralarge Scale Integration
1997 · Kow‐Ming Chang, Ta‐Hsun Yeh, et al. · Journal of The Electrochemical Society · 2
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The Influence of Precleaning Process on the Gate Oxide Film Fabricated by Electron Cyclotron Resonance Plasma Oxidation
1997 · Kow‐Ming Chang, Chii‐Horng Li, et al. · Journal of The Electrochemical Society · 2
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A Simple and Efficient Pretreatment Technology for Selective Tungsten Deposition in Low-Pressure Chemical Vapor Deposition Reactor
1994 · Kow-Ming Chang, Ta-Hsun Yeh, et al. · Japanese Journal of Applied Physics · 2
Characteristics of Selective Chemical Vapor Deposition of Tungsten on Aluminum with a Vapor Phase Precleaning Technology
1997 · Kow‐Ming Chang, Ta‐Hsun Yeh, et al. · Journal of The Electrochemical Society · 1
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Influences of damage and contamination from reactive ion etching on selective tungsten deposition in a low-pressure chemical-vapor-deposition reactor
1996 · Kow-Ming Chang, Ta-Hsun Yeh, et al. · Journal of Applied Physics · 1
Barrier Characteristics of Chemical Vapor Deposited Amorphous‐like Tungsten Silicide with In Situ Nitrogen Plasma Treatment
1999 · Kow‐Ming Chang, I‐Chung Deng, et al. · Journal of The Electrochemical Society
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Interface characteristics of selective tungsten on silicon using a new pretreatment technology for ULSI application
1997 · Kow-Ming Chang, Ta-Hsun Yeh, et al. · IEEE Transactions on Electron Devices
Activity Coefficients of Electrons and Holes in Degenerate Semiconductors with Nonuniform Composition
1994 · Kow-Ming Chang, Ta-Hsun Yeh, et al. · Japanese Journal of Applied Physics
Works count: 18
Citation count: 156
H-index: 5
I10-index: 4
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