Work

Segmented-channel Si1−xGex/Si pMOSFET for improved ION and reduced variability

Year: 2012

Type: conference-paper

Source: Symposium on VLSI Technology

DOI: 10.1109/vlsit.2012.6242514

Authors: Byron Ho, Nuo Xu, Bingxi Wood, Vinh Tran, Saurabh Chopra, Yihwan Kim, Bich-Yen Nguyen, Olivier Bonnin, Carlos Mazure, Satheesh Kuppurao, Chorng-Ping Chang, Tsu-Jae King Liu

Institutions: University of California, Berkeley, Applied Materials (United States), Soitec (France)

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

OpenAlex ID: W2002152600

FWCI:

Cites: 3

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Related to: 10