Work

Influence of annealing on the concentration profiles of boron implantations in silicon

Year: 1973

Type: article

Source: Applied Physics A

DOI: 10.1007/bf00889509

Authors: W. K. Hofker, H. W. Werner, D. P. Oosthoek, H. A. M. de Grefte

Institution: Philips (Netherlands)

Language: English

Topic: Ion-surface interactions and analysis

Subfield: Surfaces, Coatings and Films

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2002225307

FWCI: 2.579

Cites: 12

Cited by: 102

Related to: 10