Author

H. W. Werner

Observed names: H W Werner, H. W. WERNER, H. Werner, H.W Werner, H.W. WERNER, H.W. Werner, HW Werner, Werner, H.W.

Observed institutions: TU Wien, Philipps University of Marburg, Philips (Netherlands), Philips (Germany), Signify (Netherlands)

OpenAlex ID: A5111381577

Secondary Ion Mass Spectrometry: Basic Concepts, Instrumental Aspects, Applications and Trends

1987 · A. Benninghoven, F. Rüdenauer, et al. · 601

Secondary ion mass spectrometry (SIMS VI)

1988 · A. Benninghoven, A.M. Huber, et al. · Analytica Chimica Acta · 214

Secondary Ion Mass Spectrometry SIMS III

1982 · A. Benninghoven, J. Giber, et al. · Springer series in chemical physics · 142

Quantitative secondary ion mass spectrometry: A review

1980 · H. W. Werner · Surface and Interface Analysis · 133

Charging of insulators by ion bombardment and its minimization for secondary ion mass spectrometry (SIMS) measurements

1976 · H. W. Werner, A. E. Morgan · Journal of Applied Physics · 130

Theoretical and experimental aspects of secondary ion mass spectrometry

1974 · H.W. Werner · Vacuum · 127

Quantitative analysis of low alloy steels by secondary ion mass spectrometry

1976 · A. E. Morgan, H. W. Werner · Analytical Chemistry · 116

Secondary Ion Mass Spectrometry SIMS IV

1984 · A. Benninghoven, J. Okano, et al. · Springer series in chemical physics · 114

The use of secondary ion mass spectrometry in surface analysis

1975 · H.W. Werner · Surface Science · 112

A comparative study of methods for thin-film and surface analysis

1984 · H W Werner, R P H Garten · Reports on Progress in Physics · 102

Influence of annealing on the concentration profiles of boron implantations in silicon

1973 · W. K. Hofker, H. W. Werner, et al. · Applied Physics A · 102

The influence of bombardment conditions upon the sputtering and secondary ion yields of silicon

1981 · A.E. Morgan, H.A.M. de Grefte, et al. · Applications of Surface Science · 84

Test of a quantitative approach to secondary ion mass spectrometry on glass and silicate standards

1977 · A. E. Morgan, H. W. Werner · Analytical Chemistry · 79

Analysis of microelectronic materials and devices

1991 · M. Grasserbauer, H. W. Werner · Wiley eBooks · 76

Boron implantations in silicon: A comparison of charge carrier and boron concentration profiles

1974 · W. K. Hofker, H. W. Werner, et al. · Applied Physics A · 75

Beam techniques for the analysis of poorly conducting materials

1984 · H. W. Werner, N. Warmoltz · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 58

Molecular versus atomic secondary ion emission from solids

1978 · A. E. Morgan, H. W. Werner · The Journal of Chemical Physics · 58

On the use of the saha-eggert equation for quantitative sims analysis using argon primary ions

1976 · F.G Rüdenauer, W Steiger, et al. · Surface Science · 56

The depth dependence of the depth resolution in sputter profiling

1982 · H. W. Werner · Surface and Interface Analysis · 52

SIMS Analysis of Aqueous Corrosion Profiles in Soda‐Lime‐Silica Glass

1979 · R. G. GOSSINK, H. A. M. de GREFTE, et al. · Journal of the American Ceramic Society · 51

Quantitative SIMS studies with a uranium matrix

1977 · A.E. Morgan, H.W. Werner · Surface Science · 51

Investigation of surface layers by SIMS and SIIMS

1973 · H.W. Werner, H.A.M. De Grefte · Surface Science · 48

Application of characteristic secondary ion mass spectra to a depth analysis of copper oxide on copper

1973 · H. W. Werner, H. A. M. De Grefte, et al. · Radiation Effects · 47

The influence of selective sputtering on surface composition

1976 · H.W. Werner, N. Warmoltz · Surface Science · 46

Investigation of Solids by Means of an Ion-Bombardment Mass Spectrometer

1969 · H. W. Werner · Springer eBooks · 44

Works count: 76

Citation count: 3,265

H-index: 29

I10-index: 48