Work

Boron implantations in silicon: A comparison of charge carrier and boron concentration profiles

Year: 1974

Type: article

Source: Applied Physics A

DOI: 10.1007/bf00884267

Authors: W. K. Hofker, H. W. Werner, D. P. Oosthoek, N. J. Koeman

Institution: Philips (Netherlands)

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2011127533

FWCI: 2.958

Cites: 17

Cited by: 75

Related to: 10